Numerical Modeling of Vertical Cavity Semiconductor Lasers
نویسندگان
چکیده
A vertical cavity surface emitting laser (VCSEL) is a diode laser whose optical cavity is formed by growing or depositing DBR mirror stacks that sandwich an active gain region. The resulting short cavity supports lasing into a single longitudinal mode normal to the wafer, making these devices ideal for a multitude of applications, ranging fiom high-speed communication to high-power sources (from 2D arrays). This report describes the development of a numerical VCSEL model, whose goal is to both further ow understanding of these complex devices and provide a tool for accurate design and data analysis.
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